Reconfigurable Quasi‐Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric–2D Semiconductor vdW Architectures (Adv. Mater. 15/2022)

Ferroelectric Field-Effect Transistors In article number 2200032, Hang Luo, Jian Sun, and co-workers report how a ferroelectric field-effect transistor (FeFET) can work as both hysteresis-free low-power-consumption negative-capacitance memory device for neural computing. The functions are reconfigured controlled by modulating the behaviors of interfacial oxygen vacancies. frontispiece shows chips consisting reconfigurable FeFET devices.